STMicroelectronics STU13005
This device is manufactured using high voltage s multi epitaxial planar technology for high switching b speeds and high voltage capability. It uses a - O cellular emitter structure with planar edge ) termination to enhance switching speeds while duct(s maintaining a wide RBSOA.| Part No. | STU13005 |
|---|---|
| Datasheet | STU13005 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
● Low spread of dynamic parameters● Minimum lot-to-lot spread for reliable operation )
● Very high switching speed uct(s
APPLICATIONS
rod● Electronic ballast for fluorescent lighting
● Switch mode power supplies lete P
DESCRIPTION
o TAB 3 2 1 IPAK Figure 1. Internal schematic diagram C (2, TAB) (1) B Obsolete Pro E (3) Table 1. Device summary Order codes Marking STU13005 U13005 Package IPAK Packaging Tube March 2012 This is information on a discontinued product. Doc ID 022596 Rev 2 1/11 11 Electrical ratings 1 Electrical ratings STU13005 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC t(s) ICM IB uc IBM rod PTOT P TSTG te TJ Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature bsole Table 3. Thermal...
