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STU13005N - High voltage fast-switching NPN power transistor

General Description

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STU13005N High voltage fast-switching NPN power transistor IPAK 3 2 1 Figure 1. Internal schematic diagram Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Application • Switch mode power supplies (AC-DC converters) Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Order code STU13005N Marking U13005N Table 1. Device summary Package IPAK Packaging Tube May 2014 This is information on a product in full production. DocID 022832 Rev 2 1/11 www.st.