STMicroelectronics STV160NF02L
The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.| Part No. | STV160NF02L |
|---|---|
| Datasheet | STV160NF02L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Process simplification also translates into improved manufacturing reproducibility.APPLICATIONS
BUCK CONVERTERS IN HIGH PERFORMACE TELECOM AND VRMs DC-DC CONVERTERS CONNECTION DIAGRAM (TOP VIEW) sABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS I D (* * ) ID I DM (● ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Storage Temperature Max. Operating Junction T emperature o Value 20 20 ± 20 160 113 640 160 1.07 -65 to 175 175 Unit V V V A A A W W /o C o C o C (●) Pulse width limited by safe operating area ( **) Limited only maximum junction temperature allowed by PowerSO-10 June 1999 1/8 STV160NF02L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature F or Soldering Purpose Ma...
