Datasheet Summary
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STW13NB60 STH13NB60FI
- CHANNEL 600V
- 0.48Ω
- 13A
- TO-247/ISOWATT218 PowerMESH™ MOSFET
TYPE ST W13NB60 ST H13NB60FI .. s s s s s
V DSS 600 V 600 V
R DS(on) <0.54 Ω <0.54 Ω
ID 13 A 8.6 A
TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt...