STMicroelectronics STW13NB60
N-Channel Power MOSFET
| Part No. | STW13NB60 |
|---|---|
| Datasheet | STW13NB60 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
t(s) Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an c advanced family of power MOSFETs with u outstanding performances. The new patent rod pending strip layout coupled with the Company’s proprietary edge termination structure, gives the P lowest RDS(on) per area, exceptional avalanche te and dv/dt capabilities and unrivalled gate charge le and switching characteristics. soAPPLICATIONS
b s HIGH CURRENT, HIGH SPEED SWITCHING O s SWITCH MODE POWER SUPPLIES (SMPS) - s DC-AC CONVERTERS FOR WELDING ) EQUIPMENT AND UNINTERRUPTIBLE t(s POWER SUPPLIES AND MOTOR DRIVE ducABSOLUTE MAXIMUM RATINGS
ro Symbol Parameter te P VDS le VDGR o VGS sID ObID Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC 3 2 1 TO-247 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW13NB60 STH13NB60FP 600 600 ± 30 13 8.6 8.2 5.4 Unit V V V A A IDM(...
