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STW13NB60FI - N - CHANNEL PowerMESH MOSFET

Download the STW13NB60FI datasheet PDF. This datasheet also includes the STW13NB60 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STW13NB60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.

Overview

® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS(on) <0.54 Ω <0.54 Ω ID 13 A 8.6 A TYPICAL RDS(on) = 0.

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