STMicroelectronics STW18N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- AM01476v1_tab recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STW18N60DM2 |
|---|---|
| Datasheet | STW18N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 12A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-247 D(2, TAB) Order code VDS RDS(on) max. ID STW18N60DM2 600 V 295 mΩ 12 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Product status link STW18N60DM2 Product summary Order code STW18N60DM2 Marking 18N60DM2 Package TO-247 Packing Tube DS10964 - Rev 7 - November 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM (1) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C di/dt(2) Peak diode recovery current slope dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
