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STW21N90K5 - N-CHANNEL MOSFET

General Description

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology.

This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure.

Key Features

  • Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W.
  • TO-220 worldwide best RDS(on).
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W ■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zener-protected Applications ■ Switching applications TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Description These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology.