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STW25N60M2-EP - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology.

Thanks to its strip layout and an AM01476v1 improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Product status link STW25N60M2-EP Product summary Order code STW25N60M2-EP Marking 25N60M2EP Package TO

Overview

STW25N60M2-EP Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-247 package 3 2 1.

Key Features

  • Order code VDS @ TJmax RDS(on) max. STW25N60M2-EP 650 V 0.188 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 18 A D(2, TAB) G(1).