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STW27N60M2-EP - N-channel Power MOSFET

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General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.

Table 1: Device summary Marking Package Packaging 27N60M2EP TO-220 TO-247 Tube December 2015 DocID028723 Rev 1 This is information on a product in full production.

Overview

STP27N60M2-EP, STW27N60M2-EP N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data.

Key Features

  • Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected Figure 1: Internal schematic diagram.

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