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STW36NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STW36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in.

General Description

This device is made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Key Features

  • Order code STW36NM60N VDSS @ TJmax 650 V RDS(on) max < 0.105 Ω ID 29 A PW 210 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.