STW3N170 Description
G(1) S(3) This Power MOSFET is designed using the STMicroelectronics consolidated striplayout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of parable standard parts from other manufacturers. STW3N170 Electrical ratings 1 Electrical ratings Table.
STW3N170 Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching