Datasheet4U Logo Datasheet4U.com

STW40N20 - N-CHANNEL MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

Key Features

  • TYPE www. DataSheet4U. com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW40NS15 N-CHANNEL MOSFET ST Microelectronics
STW4141 Single Coil Dual Output Step Down DC/DC Converter ST Microelectronics
STW42N65M5 N-Channel Power MOSFET ST Microelectronics
STW42N65M5 N-Channel MOSFET INCHANGE
STW43NM50N Power MOSFETs ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW40N60M2 N-CHANNEL MOSFET
STW40N65M2 N-channel Power MOSFET
STW40N90K5 N-channel Power MOSFET
STW40N95DK5 N-channel Power MOSFET
STW40N95K5 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features TYPE www.DataSheet4U.com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20 ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.