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STB40N60M2, STP40N60M2, STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2 3
1
D2PAK
TAB
3 2 1
TO-220
3 2 1
TO-247
Features
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2 STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Figure 1. Internal schematic diagram
' 7$%
Applications
• Switching applications • LLC converters, resonant converters
Description
* 6
AM01476v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
STW40N60M2 Datasheet
