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STW56N65M2-4 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • 72    Figure 1. Internal schematic diagram 'UDLQ  .
  • DWH  Order code STW56N65M2-4 VDS 650 V RDS(on) max ID 0.062 Ω 49 A.
  • Excellent switching performance thanks to the extra driving source pin.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW56N65M2-4 N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2 Power MOSFET in a TO247-4 package Datasheet - production data Features 72    Figure 1. Internal schematic diagram 'UDLQ  *DWH  Order code STW56N65M2-4 VDS 650 V RDS(on) max ID 0.062 Ω 49 A • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.