STW56N65M2-4 Datasheet | STMicroelectronics

N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2 Power MOSFET in a TO247-4 package - production data Features 72 Figure 1. Internal schematic diagram 'UDLQ - DWH Order code STW56N65M2-4 VDS 650 V RDS(on) max ID 0.062 Ω 49 A - Excellent switching performance thanks to the extra driving source pin - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. 'ULYHU VRXUFH 3RZHU VRXUFH $0Y= Order code STW56N65M2-4 Table 1. Device summary Marking Package 56N65M2 TO247-4 Packaging...