STW58N65DM2AG
STW58N65DM2AG is N-CHANNEL MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package
- production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code STW58N65DM2AG
VDS 650 V
RDS(on) max. 0.065 Ω
ID 48 A
PTOT 360 W
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STW58N65DM2AG
Table 1: Device summary Marking
58N65DM2
Package TO-247
Packing Tube
September 2015
Doc ID028347 Rev 2
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