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STWA57N65M5 - N-channel Power MOSFET

Download the STWA57N65M5 datasheet PDF. This datasheet also covers the STW57N65M5 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 STWA57N65M5 710 V 0.063 Ω 42 A.
  • Worldwide best RDS(on).
  • area amongst the silicon based devices.
  • Higher VDSS rating, high dv/dt capability.
  • Excellent switching performance.
  • Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram '  .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW57N65M5-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 STWA57N65M5 710 V 0.063 Ω 42 A • Worldwide best RDS(on)*area amongst the silicon based devices • Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram '  Applications • Switching applications Description *  6  $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.