STWA57N65M5 Datasheet
STWA57N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
* 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerME.
3 2 1
TO-247 TO-247 long leads
Order codes VDS @ TJmax RDS(on) max ID
STW57N65M5 STWA57N65M5
710 V
0.063 Ω 42 A
* Worldwide best RDS(on)*area amongst the silicon based devices
* Higher VDSS rating, high dv/dt capability
* Excellent switching performance
* Easy to drive, 100% avalanche tested
.
STWA57N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262( I2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-.
*With TO-262( I2PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM .