STMicroelectronics TIP126
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.FEATURES
● Low collector-emitter saturation voltage● Complementary NPN - PNP transistors
APPLICATIONS
● General purpose linear and switchingDESCRIPTION
3 2 1 TO-220 Figure 1. Internal schematic diagrams NPN: R1= 7 KΩ R2= 70 Ω PNP: R1= 16 KΩ R2= 60 Ω Table 1. Device summary Order codes TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Marking TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Package TO-220 November 2008 Rev 4 Packaging Tube 1/13 13 Content Content TIP120, TIP121, TIP122, TIP125, TIP126, TIP127 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .