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TIP126 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Low collector-emitter saturation voltage.
  • Complementary NPN - PNP transistors.

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TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 2 1 TO-220 Figure 1. Internal schematic diagrams NPN: R1= 7 KΩ R2= 70 Ω PNP: R1= 16 KΩ R2= 60 Ω Table 1. Device summary Order codes TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Marking TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Package TO-220 November 2008 Rev 4 Packaging Tube 1/13 www.st.