TMMBAT46 Overview
General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C Pulse test: Test Conditions VR = 0V VR = 1V f = 1MHz Min.
Datasheet Details
| Part number | TMMBAT46 |
|---|---|
| Datasheet | TMMBAT46_STMicroelectronics.pdf |
| File Size | 56.68 KB |
| Manufacturer | STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
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