STMicroelectronics TMMBAT46
This publication supersedes and replaces all information previously supplied.DESCRIPTION
General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordware Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Tl = 80 °C MINIMELF (Glass) Value 100 150 350 750 150 - 65 to + 150 - 65 to + 125 260 Unit V mA mA mA mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W August 1999 Ed: 1A 1/4 TMMBAT 46ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 75V VR = 50V VR = 10V Test Conditions IR = 100µA IF = 0.1mA IF = 10mA IF = 250mA VR = 1.5V Min. 100 0.25 0.45 1 0.5 5 0.8 7.5 2 15 5 20 µA Typ.