STMicroelectronics TMMBAT41
This device has integrated protection against excessive voltage such as electrostatic discharges.| Part No. | TMMBAT41 |
|---|---|
| Datasheet | TMMBAT41 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
| Buy | Stock & Price |
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Ti = 95 °C MINIMELF (Glass) Value 100 100 350 750 100 - 65 to + 150 - 65 to + 125 260 Unit V mA mA mA mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/WELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 100°C Test Conditions IR = 100µA IF = 1mA IF = 200mA VR = 50V Min. 100 0.4 0.45 1 0.1 20 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 1V f = 1MHz Min. Typ. 2 Max. Unit pF * Pulse test: tp ≤ 300µs δ < 2%.
