TMMBAT48 Overview
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. Unit V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C trr Tj = 25°C IF = 10mA Test Conditions VR = 0V VR = 1V VR = 1V irr = 1mA RL = 100Ω f = 1MHz Min.