STMicroelectronics TMMBAT47
This publication supersedes and replaces all information previously supplied.DESCRIPTION
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordward Current Surge non Repetitive Forward Current Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms tp = 1s Ptot Tstg Tj TL Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C MINIMELF (Glass) TMMBAT47 20 TMMBAT48 40 Unit V mA A A 350 1 7.5 1.5 330 - 65 to 150 - 65 to 125 260 mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W August 1999 Ed: 1A 1/5 TMMBAT 47/TMMBAT 48ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol VBR Tj = 25°C Tj = 25°C VF* Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C I...