STMicroelectronics TR136
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.| Part No. | TR136 |
|---|---|
| Datasheet | TR136 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
● High voltage capability● Low spread of dynamic parameters
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
APPLICATIONS
● Electronic ballast for fluorescent lighting● Electronic transformer for halogen lamps
DESCRIPTION
3 2 1 TO-220 Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking TR136 TR136 Package TO-220 Packaging Tube February 2008 Rev 2 1/9 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc ≤25°C Storage temperature Max. operating junction temperature TR136 Value Unit 700 V 400 V 9 V 3 A 6 A 1.5 A 3 A 60 W -65 to 150 °C 150 °C 2/9 TR136 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3.
