STMicroelectronics TR136D
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.| Part No. | TR136D |
|---|---|
| Datasheet | TR136D Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
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● High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3
APPLICATIONS
●● TO-220 Electronic ballast for fluorescent lighting Electronic transformer for halogen lamps
DESCRIPTION
Figure 1. Internal schematic diagrams Table 1. Device summary Marking TR136D Package TO-220 Packing Tube Order code TR136D October 2007 Rev 1 1/9 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings TR136D 1 Electrical ratings Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc ≤25°C Storage temperature Max. operating junction temperature Value 700 400 9 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 2.
