STMicroelectronics TSD57060
The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V.| Part No. | TSD57060 |
|---|---|
| Datasheet | TSD57060 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS The LdmoSTFAMILY |
| Buy | Stock & Price |
DESCRIPTION
It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. GateABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70o C) Max. O perating Junction Temperature Storage T emperature Value 65 ± 20 7 108 200 -65 to 150 3.Source Uni t V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.2 0.45 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). January 2000 1/8 SD57060 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 1 mA VDS = 28 V V DS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 88 44 1.7 REF.
