TXDV412 Datasheet | STMicroelectronics

FEATURES VERY HIGH MUTATION : > 42.5 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) d V/dt : 500 V/µs min DESCRIPTION The TXDV 412 ---> 812 use a high performance passivated glass alternistor technology. Featuring very high mutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter A1 A2 TO220AB (Plastic) Value Tc = 90 °C 12 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 170 125 120 72 20 100 - 40 to + 150 - 40 to + 125 260 I2t d I/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500m A di G/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 412 Repetitive peak off-state voltage Tj = 125 °C 400 TXDV 612 600 812 800 Unit VDRM VRRM March 1995 1/5 TXDV 412 ---> 812 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 2.5 1.9 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=110°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH - VTM - IDRM IRRM d V/dt - IT= 500m A gate open ITM= 17A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (d V/dt)c = 200V/µs (d V/dt)c =...