TXDV608 Datasheet | STMicroelectronics

FEATURES VERY HIGH MUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) d V/dt : 500 V/µs min DESCRIPTION The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high mutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter A1 A2 TO220AB (Plastic) Value Tc = 90 °C 8 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 115 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 I2t d I/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500m A di G/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 408 TXDV 608 600 808 800 Unit VDRM VRRM March 1995 Repetitive peak off-state voltage Tj = 125 °C 1/5 TXDV 408 ---> 808 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 4 3 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=110°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH - VTM - IDRM IRRM d V/dt - IT= 500m A gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (d V/dt)c = 200V/µs (d V/dt)c =...