TYN210 Datasheet | STMicroelectronics

® TYN210 ---> TYN1010 Features High surge capability High on-state current High stability and reliability s s s DESCRIPTION The TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t d I/dt Tstg Tj Tl Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 100m A d IG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 100°C Tc = 100°C tp = 8.3ms tp = 10ms tp = 10ms Value 10 6.4 105 100 50 50 -40 to +150 -40 to +125 260 A2s A/µs °C °C Unit A A A TYN Symbol VDRM VRRM Parameter 210 Repetitive peak off-state voltage Tj = 125°C 200 410 400 610 600 810 800 1010 1000 V Unit September 2001 - Ed: 1A 1/4 TYN210 ---> TYN1010 THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 2.5 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM d V/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM RL = 33Ω RL = 33Ω RL = 3.3kΩ Test conditions Tj = 25°C Tj = 25°C Tj =110°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 110°C Linear slope up to VD = 67% VDRM gate open VD=67%VDRM ITM= 20A VR= 25V d ITM/dt=30 A/µs d VD/dt= 50V/µs Tj = 110°C Tj = 110°C VRGM = 5V Value MAX. MAX. MIN. TYP. TYP. MAX. MAX. MAX. MAX. MIN. TYP. 15 1.5 0.2 2 50 30 1.6 0.01 2 200 70 Unit m A V V µs m A m A V m A VD = VDRM IG = 40m A d IG/dt = 0.5A/µs IG = 1.2IGT IT = 100m...