TYN212 Datasheet | STMicroelectronics

TXN/TYN 0512 ---> TXN/TYN 1012 . . . . Features HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle,single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 m A di G/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter TXN TYN TXN TYN Tc=80°C Tc=90°C Tc=80°C Tc=90°C tp=8.3 ms tp=10 ms tp=10 ms Value 12 8 125 120 72 100 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C °C Unit A A A TO220AB (Plastic) I2 t d I/dt Tstg Tj Tl Symbol Parameter 0512 112 100 212 200 TYN/TXN 412 400 612 600 812 800 1012 1000 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C April 1995 1/5 TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient TXN TYN Parameter Value 60 3.5 2.5 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD =12V VD =12V Test Conditions (DC) R L=33Ω (DC) R L=33Ω Tj=25°C Tj=25°C Tj= 125°C Tj=25°C Tj=25°C gate open Tj=25°C Tj=25°C Tj=25°C Tj= 125°C Tj= 125°C Tj= 125°C MIN TYP MAX MAX MIN TYP Value 15 1.5 0.2 2 Unit m A V V µs m A m A V m A VD =VDRM RL=3.3k Ω VD =VDRM IG = 40m A d IG/dt = 0.5A/µs IG= 1.2 IGT IT= 100m A IL IH VTM IDRM IRRM d V/dt...