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STU16NB50
N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH™ MOSFET
PRELIMINARY DATA TYPE ST U16NB50
s s s s s s
V DSS 500 V
R DS(on) < 0.33 Ω
ID 15.6 A
TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING
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DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
U16NB50 Datasheet
