VND5N07-E
VND5N07-E is fully autoprotected Power MOSFET manufactured by STMicroelectronics.
OMNIFET II fully autoprotected Power MOSFET
- production data
3 1
DPAK TO-252
3 2 1
IPAK TO-251
Features
Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage
RDS (on) ILIMH
VCLAMP
0.2Ω 5A 70V
Description
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
- Linear current limitation
- Thermal shutdown
- Short circuit...
