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VND670SP Datasheet PDF

STMicroelectronics VND670SP

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches.
Part No. VND670SP
Datasheet VND670SP Download
Manufacturer
STMicroelectronics
Description DUAL HIGH SIDE SWITCH
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VND670SP datasheet page 1 preview

FEATURES

Type RDS(on) IOUT VCC VND670SP 30mΩ(1) t(s)1. Per each channel. 15A(1) 40V uc● 5V logic level compatible inputs rod● Gate drive for two external power MOSFET P● Undervoltage and overvoltage shutdown te● Overvoltage clamp le● Thermal shutdown o● Cross-conduction protection bs● Current limitation O● Very low standby power consumption ) -● PWM operation up to 10 KHz t(s● Protection against loss of ground and loss of cVCC Obsolete Produ● Reverse battery protection 10 1 PowerSO-10

DESCRIPTION

INA and INB allow to select clockwise or counter clockwise drive or brak
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