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VND670SP Datasheet DUAL HIGH SIDE SWITCH

Manufacturer: STMicroelectronics

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General Description

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration.

The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches.

INA and INB allow to select clockwise or counter clockwise drive or brak

Overview

VND670SP Dual high-side switch with dual Power MOSFET gate driver (bridge.

Key Features

  • Type RDS(on) IOUT VCC VND670SP 30mΩ(1) t(s)1. Per each channel. 15A(1) 40V uc.
  • 5V logic level compatible inputs rod.
  • Gate drive for two external power MOSFET P.
  • Undervoltage and overvoltage shutdown te.
  • Overvoltage clamp le.
  • Thermal shutdown o.
  • Cross-conduction protection bs.
  • Current limitation O.
  • Very low standby power consumption ) -.
  • PWM operation up to 10 KHz t(s.
  • Protection against loss of ground and loss of cVCC Obsolete Produ.
  • Reverse ba.

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