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VNN3NV04P-E - fully autoprotected Power MOSFET

General Description

The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Key Features

  • VNN3NV04P-E VNS3NV04P-E.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Type VNN3NV04P-E VNS3NV04P-E RDS(on) 120 mΩ Ilim 3.5 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European directive 2 3 2 1 SOT-223 SO-8 Description The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.