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VNP10N06 Datasheet PDF

STMicroelectronics VNP10N06

The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Part No. VNP10N06
Datasheet VNP10N06 Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
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VNP10N06 datasheet page 1 preview

DESCRIPTION

Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip n harsh enviroments. 3 2 1 TO-220 BLOCK DIAGRAM September 2013 1/11 VNP10N06 ABSOLUTE MAXIMUM RATING Symbol Parameter VDS Drain-source Voltage (Vin = 0) Vin Input Voltage Iin Input Current ID Drain Current IR Reverse DC Output Current Vesd Ptot Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) Total Dissipation at Tc = 25 oC Tj Operating Junction Temperature Tc Case Operating Temperature Tstg Storage Temperature Value Internally Clamped Internally Clamped ± 20 Internally Limited -15 4000 42 Internally Limited Internally Limited -55 to 150 Unit V V mA A A V W oC oC oC THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 3 62.5 oC/W oC/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) OFF Symbol VCLAMP VIL VIH VINCL IDSS IISS Parameter Drain-source Clamp Voltage Input Low Level Voltage Input High Level Voltage I...
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