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VNP10N07 Datasheet PDF

STMicroelectronics VNP10N07

The VNP10N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.
Part No. VNP10N07
Datasheet VNP10N07 Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
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VNP10N07 datasheet page 1 preview

DESCRIPTION

Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM 3 2 1 TO-220 tation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. September 2013 1/11 VNP10N07 ABSOLUTE MAXIMUM RATING Symbol Parameter VDS Drain-source Voltage (Vin = 0) Vin Input Voltage ID Drain Current IR Reverse DC Output Current Vesd Ptot Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) Total Dissipation at Tc = 25 oC Tj Operating Junction Temperature Tc Case Operating Temperature Tstg Storage Temperature Value Internally Clamped 18 Internally Limited -14 2000 50 Internally Limited Internally Limited -55 to 150 Unit V V A A V W oC oC oC THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 2.5 62.5 oC/W oC/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) OFF Symbol VCLAMP VCLTH VINCL IDSS IISS Parameter Drain-source Clamp Voltage Drain-source C...
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