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VNP35NV04 Datasheet PDF

STMicroelectronics VNP35NV04

The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM intended for replacement of standard Power MOSFETS from DC up to 25KHz applications.
Part No. VNP35NV04
Datasheet VNP35NV04 Download
Manufacturer
STMicroelectronics
Description OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
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VNP35NV04 datasheet page 1 preview

DESCRIPTION

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Over Temperature Linear Current Limiter 3 SOURCE FC01000 July 2003 1/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Operating Junction Temperature Case Operating Temperature Storage Temperature PowerSO-10™ Value D2PAK TO-220 Internally Clamped Internally Clamped +/-20 4.7 Internally Limited -30 4000 16500 125 125 125 Internally limited Internally limited -55 to 150 208 Unit TO-247 V V mA Ω A A V V W °C °C °C CONNECTION DIAGRAM (TOP VIEW) INPUT INPUT INPUT INPUT INPUT 6 7 8 9 10 11 DRAIN 5 4 3 2 1 SOURCE SOURCE N.C.
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