W29NK50Z Datasheet | STMicroelectronics

Features TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 .. DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series plements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING I IDEAL FOR OFF-LINE POWER SUPPLIES I WELDING MACHINES I LIGHTING Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STW29NK50Z MARKING W29NK50Z PACKAGE TO-247 PACKAGING TUBE Rev. 1 October 2004 1/10 STW29NK50Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM (- ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20 K Ω) Gate- source Voltage Drain Current (continuous) at T C = 25°C Drain Current (continuous) at T C = 100°C Drain Current (pulsed) Total Dissipation at T C = 25°C Derating Factor Gate source ESD (HBM-C = 100p F, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 ± 30 31 19.5 124 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C (- ) Pulse width limited by safe operating area (1) ISD ≤ 31 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX .. Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.36 50 300 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single...