W29NK50ZD Datasheet | STMicroelectronics

Features TYPE STW29NK50ZD s s Figure 1: Package ID 29 A PW 350 W VDSS 500 V RDS(on) < 0.15 Ω TYPICAL RDS(on) = 0.11 Ω HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED .. s GATE CHARGE MINIMIZED s LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY s FAST INTERNAL RECOVERY TIME 3 2 1 TO-247 DESCRIPTION The Fast Super Mesh™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series plements the “FDmesh™” Advanced Technology. Figure 2: Internal Schematic Diagram APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE Table 2: Order Codes PART NUMBER STW29NK50ZD MARKING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE Rev. 2 December 2004 1/7 STW29NK50ZD Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM(- ) PTOT VESD(G-S) .. Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100p F, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 ± 30 29 18.27 116 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C dv/dt (1) Tstg Tj (- ) Pulse width limited by safe operating area (1) ISD≤ 29 A, di/dt≤ 200 A/µs, VDD≤ V(BR)DSS, T J≤ TJMAX Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.36 50 300 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 29 500 Unit A m J Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition...