W3N150 Overview
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. ' 3 !-V Table.
W3N150 Key Features
- VDSS 1500 V 1500 V 1500 V