W3N150 Overview
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Key Features
- Type STFW3N150 STP3N150 STW3N150 - - - - - VDSS 1500 V 1500 V 1500 V RDS(on) max
