W5NA100
W5NA100 is STW5NA100 manufactured by STMicroelectronics.
STW5NA100 STH5NA100FI
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STW5NA100 STH5NA100FI .. s s s s s s
V DSS 1000 V 1000 V
R DS(on) < 3.5 Ω < 3.5 Ω
ID 4.6 A 2.9 A
TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247
3 2 1
3 2 1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STW5NA100 V DS VDGR V GS ID ID I DM (
- ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o
Unit
STH5NA100FI V V V 2.9 1.8 18.4 60 0.48 4000 A A A W W/ o C V o o
1000 1000 ± 30 4.6 2.9 18.4 150 1.2 -65 to 150 150
C C 1/6
(- ) Pulse width limited by safe operating area
October 1997
STW5NA100-STH5NA100FI
THERMAL DATA
TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT218 2.1 o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
..
Symbol I AR E AS
Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V)
Max Value 4.2 160
Unit A m J
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 1000 50...
