W5NB100
W5NB100 is STW5NB100 manufactured by STMicroelectronics.
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR VGS ID ID
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C
IDM(- ) Ptot
Drain Current (pulsed) Total Dissipation at Tc = 25 o C
Derating Factor dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(- ) Pulse width limited by safe operating area
June 1998
Value
Unit
± 30
4.3 A
2.7 A
17 A
160 1.28
W W/o C
4 -65 to 150
(1) ISD ≤ 4 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns o C o C
1/5
STW5NB100
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink
Tl
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering...
