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TYPE STW5NB100
VDSS 1000 V
STW5NB100
N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET
RDS(on) < 4.4 Ω
ID 4.3 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 4 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
W5NB100 Datasheet
