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X0115MUF - 1A sensitive gate SCR thyristor

General Description

Thanks to highly sensitive triggering levels, the 1 A X0115MUF SCR thyristor is suitable for all applications where available gate current is limited.

Key Features

  • On-state rms current, 1 A.
  • Narrow sensitive gate current from 30 µA to 150 µA.
  • Repetitive peak off-state voltage, 600 V.
  • Non-repetitive surge peak off-state voltage, 750 V.
  • Compact and ultraflat SMBflat-3L package with creepage distance of 3.4 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A G K A K G SMBflat-3L Product status link X0115MUF Product summary IT(RMS) 1A VDRM/VRRM 600 V Tj(max.) 125 °C X0115MUF Datasheet 1 A sensitive gate SCR thyristor Features • On-state rms current, 1 A • Narrow sensitive gate current from 30 µA to 150 µA • Repetitive peak off-state voltage, 600 V • Non-repetitive surge peak off-state voltage, 750 V • Compact and ultraflat SMBflat-3L package with creepage distance of 3.