X0115MUF Datasheet | STMicroelectronics

Features - On-state rms current, 1 A - Narrow sensitive gate current from 30 µA to 150 µA - Repetitive peak off-state voltage, 600 V - Non-repetitive surge peak off-state voltage, 750 V - pact and ultraflat SMBflat-3L package with creepage distance of 3.4 mm Applications - Ground-fault circuit interrupter (GFCI, RCB, RCD) - Arc-fault circuit interrupter (AFCI) - Overvoltage crowbar protection in power supplies - Capacitive ignition circuits - Low consumption triggering switches Description Thanks to highly sensitive triggering levels, the 1 A X0115MUF SCR thyristor is suitable for all applications where available gate current is limited. The X0115MUF offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI). The surface mount SMBflat-3L package allows modern, pact, SMD based designs for automated manufacturing. Its 3.4 mm creepage distance guarantees a 250 V functional isolation (UL 840) at a level 2 pollution degree. DS13078 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office. .st. Characteristics Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameters IT(RMS) IT(AV) On-state RMS current (180° conduction angle) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t I2t value for fusing Critical rate of rise of on-state current dl/dt IG = 2 x IGT , tr ≤ 100 ns VDRM / VRRM Repetitive peak off-state voltage VDSM / VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Peak forward gate current Average gate power dissipation Tstg Storage junction temperature range Tj Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 10 ms tp = 20 µs Tl = 113...