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FLM2527L-20F - L-Band Internally Matched FET

Description

The FLM2527L-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

This product is uniquely suited for use in MMDS base station amplifiers applications.

Features

  • High Output Power: P1dB = 43.0dBm (Typ. ).
  • High Gain: G1dB = 11.0dB (Typ. ).
  • High PAE: hadd = 38% (Typ. ).
  • Broad Band: 2.5 to 2.7GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

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Datasheet Details

Part number FLM2527L-20F
Manufacturer SUMITOMO
File Size 404.35 KB
Description L-Band Internally Matched FET
Datasheet download datasheet FLM2527L-20F Datasheet

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Full PDF Text Transcription

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FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM2527L-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. This product is uniquely suited for use in MMDS base station amplifiers applications. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.
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