FLM5053-4F Datasheet Text
FLM5053-4F
C-Band Internally Matched FET
Features
- High Output Power: P1dB = 36.5dBm (Typ.)
- High Gain: G1dB = 10.5dB (Typ.)
- High PAE: hadd = 37% (Typ.)
- Low IM3 = -46dBc@Po = 25.5dBm
- Broad Band: 5.0 to 5.3GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package DESCRIPTION The FLM5053-4F is a power GaAs FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent...