FLM5053-8F
Overview
- High Output Power: P1dB = 39.5dBm (Typ.)
- High Gain: G1dB = 9.5dB (Typ.)
- High PAE: hadd = 36% (Typ.)
- Low IM3 = -46dBc@Po = 28.5dBm
- Broad Band: 5.0 to 5.3GHz
- Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5053-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
- The drain-source operating voltage (V DS ) should not exceed 10 volts.
- The forw ard and reverse gate currents should not exceed 32.0 and -4.4 mA respectively w ith gate resistance of 100ohm. Rating 15 -5 42.8 -65 to +175 175 Unit V V W deg.C deg.C
