FLM5964-18F
FLM5964-18F is C-Band Internally Matched FET manufactured by SUMITOMO.
FEATURES
- High Output Power: P1d B = 43.0d Bm (Typ.)
- High Gain: G1d B = 10.0d B (Typ.)
- High PAE: hadd = 37% (Typ.)
- Low IM3 = -46d Bc@Po = 32.0d Bm
- Broad Band: 5.9 to 6.4GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package
DESCRIPTION
The FLM5964-18F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a
50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI remends the follow ing conditions for the reliable operation of Ga As FETs:
15 -5 83.3 -65 to +175 175
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forw ard and reverse gate currents should not exceed 48.0 and -8.4 m A respectively w ith gate resistance of 25ohm.
Unit V V W deg.C deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Test Conditions
Limit
Unit
Min. Typ. Max.
Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Gain...
