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FLM7179-4F - C-Band Internally Matched FET

General Description

The FLM7179-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 36.5dBm (Typ. ) High Gain: G1dB = 9.0dB (Typ. ) High PAE: ηadd = 35% (Typ. ) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package.

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Datasheet Details

Part number FLM7179-4F
Manufacturer SUMITOMO
File Size 249.79 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM7179-4F Datasheet

Full PDF Text Transcription for FLM7179-4F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM7179-4F. For precise diagrams, and layout, please refer to the original PDF.

FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM...

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yp.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM7179-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Ts

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