SUMITOMO Datasheet | Specifications & PDF Download

ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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FLM3439-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37%

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FLM4450-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=41%(Typ.) •

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FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 2

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FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE:

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FLM5053-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37%

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FLM6472-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (

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FLM5053-12F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 41.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 38%

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FLM5053-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=35%(Typ.) ・Broa

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FLM5359-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm (Typ.) • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39%

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FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) •

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FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd

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FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa

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FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa

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EMM5077VU FEATURES •High Output Power: Pout = 31.0 dBm (Typ.) •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin

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FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40%

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FLM5053-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (

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FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (

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FLM6472-18F FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dB

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ELM7785-10F C-band Internally Matched FET FEATURES ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.)

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