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EMM5836V1B FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Z

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ELM7179-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broa

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FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω •QFN

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FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd

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EMM5077VU FEATURES •High Output Power: Pout = 31.0 dBm (Typ.) •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin

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EMM5079ZB FEATURES •Output Power; P1dB = 24.0 dBm (Typ.) •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Z

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ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broa

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ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broa

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ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm(typ.) High Gain : G1dB=8.0dB(typ.) High P.A.E. : hadd=37%(typ.) Br

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EMM5838V1B FEATURES • High Output Power: Pout=26.0dBm (typ.) • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Match

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FLM1415-8F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=39.0dBm(Typ.) •High Gain: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broa

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EMM5077VU FEATURES •High Output Power: Pout = 31.0 dBm (Typ.) •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin

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EMM5836V1B/001 FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Z

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EMM5838V1B FEATURES • High Output Power: Pout=26.0dBm (typ.) • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Match

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FLM8596-15F X-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.0dBm(Typ.) •High Gain: G1dB=7.5dB(Typ.) •High PAE: ηadd=32%(Typ.) •Broa

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FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω •QFN

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EMM5836V1B FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Z

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FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (

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FLM6472-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (

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FMM5822VU K-Band Power Amplifier MMIC FEATURES •High Output Power: Pout=32.0dBm (typ.) •High Linear Gain: GL=22.0dB (typ.) •Broad Band: 17.7 to 19.7GH

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