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EMM5836V1BT - K-Band Power Amplifier MMIC
EMM5836V1B FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Z.FLM1011-8F - X / Ku-Band Internally Matched FET
FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: .FLM0910-3F - X / Ku-Band Internally Matched FET
FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa.EMM5841V1BT - Ka-Band Power Amplifier MMIC
EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=30.0dBm (typ.) ・Linear Gain: GL=15.0dB (typ.) ・Frequency Band: 29.5 to 30..ELM7785-60F - C-Band Internally Matched FET
ELM7785-60F FEATURES •High Output Power: P1dB=48.0dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=37%(Typ.) •Broad Band: 7.7 to 8.5GHz •Impedan.EMM5077VU - C-Band Power Amplifier MMIC
EMM5077VU FEATURES •High Output Power: Pout = 31.0 dBm (Typ.) •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin.FLM3135-4F - C-Band Internally Matched FET
FLM3135-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 12.0dB (Typ.) • High PAE: ηadd = 38% .ELM7179-4PS - C-Band Internally Matched FET
ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broa.ELM7785-4PS - C-Band Internally Matched FET
ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broa.ELM7785-16F - C-Band Internally Matched FET
ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm(typ.) High Gain : G1dB=8.0dB(typ.) High P.A.E. : hadd=37%(typ.) Br.FLM2023L-30F - L-Band Internally Matched FET
FLM2023L-30F L-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.0dBm(Typ.) • High Gain: G1dB=13.0dB(Typ.) • High PAE: hadd=43%(Typ.) .FLM5053-35F - C-Band Internally Matched FET
FLM5053-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=35%(Typ.) ・Broa.FLM5359-4F - C-Band Internally Matched FET
FLM5359-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37% .FLM5359-18F - C-Band Internally Matched FET
FLM5359-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 35% .FLM7179-6F - C-Band Internally Matched FET
FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.ELM7785-35F - C-Band Internally Matched FET
ELM7785-35F C-Band Internally Matched FET FEATURES •High Output Power: P1dB=45.5dBm(Typ.) •High Gain: G1dB=8.0dB(Typ.) •High PAE: ηadd=35%(Typ.) •Broa.EMM5078ZV - C-Band Power Amplifier MMIC
FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω •QFN .EMM5077VUT - C-Band Power Amplifier MMIC
EMM5077VU FEATURES •High Output Power: Pout = 31.0 dBm (Typ.) •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin.FMM5804YD - K-Band Power Amplifier MMIC
FEATURES •High Output Power; P1dB = 24.5 dBm (Typ.) •High Linear Gain; GL = 17 dB(Typ.) •Frequency Band ; 17.5 – 26.5 GHz •SMT Laminate Package (YD Pa.EMM5836V1B - K-Band Power Amplifier MMIC
EMM5836V1B FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Z.