Full PDF Text Transcription for FLM8596-15F (Reference)
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FLM8596-15F. For precise diagrams, and layout, please refer to the original PDF.
FLM8596-15F X-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.0dBm(Typ.) •High Gain: G1dB=7.5dB(Typ.) •High PAE: ηadd=32%(Typ.) •Broad Band: 8.5 to 9.6GH...
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: G1dB=7.5dB(Typ.) •High PAE: ηadd=32%(Typ.) •Broad Band: 8.5 to 9.6GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W deg.C deg.C Recommended Operating Condition(Case Temperature Tc=25deg.
FLM8596-15F Datasheet
