FLM8596-15F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=42.0d Bm(Typ.) - High Gain: G1d B=7.5d B(Typ.) - High PAE: ηadd=32%(Typ.) - Broad Band: 8.5 to 9.6GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM8596-15F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W deg.C deg.C Remended Operating Condition(Case Temperature Tc=25deg.C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=50ohm RG=50ohm Condition Limit ≤10 ≤16.7 ≥-3.62 Unit V m A m A ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1d B G1d B Idsr ηadd ∆G Rth ∆Tch Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=3.5A VDS=5V , IDS=300m A IGS=-300µA VDS=10V f=8.5 to 9.6 GHz IDS=0.5Idss Zs=ZL=50ohm Min. -0.5 -5.0 41.0 6.5 - Limit Typ. 7.2 4500 -1.5 42.0 7.5 4.0 32 2.3 - Max. 10.8 -3.0 5.0 1.2 2.6 100 Unit A m S V V d Bm d B A % d B deg.C/W deg.C Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V x Idsr x Rth CASE STYLE: IB ESD Class 3A 4000V to 8000V G.C.P.:Gain pression Point Note : Based on EIAJ ED-4701 C-111A(C=100p F, R=1.5kohm) Ro HS pliance Yes Edition 1.3 Jul. 2012 X-Band Internally Matched FET PWER DERATING CURVE OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER Vds=10v, Ids=0.5Idss f=9.05GHz 60 Total Power Dissipation [W] 50 40 30 20 10 0 0 50 100 150 200 Case Temperature [deg.C] [ C] Output Power [d Bm] 44 42 40 38 36 34 32 30 28 20 22 24 26 28 30 32 34 36 38 Input Power [d Bm] 80 Power Added...