The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
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FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 ...
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Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -65 to +175 +175 Unit V V W deg.C deg.
FLM5964-8F-001 Datasheet
